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Other articles related with "p-n junction"：
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97803 |
Chen Yue(岳琛), Xian-Sheng Tang(唐先胜), Yang-Feng Li(李阳锋), Wen-Qi Wang(王文奇), Xin-Xin Li(李欣欣), Jun-Yang Zhang(张珺玚), Zhen Deng(邓震), Chun-Hua Du(杜春花), Hai-Qiang Jia(贾海强), Wen-Xin Wang(王文新), Wei Lu(陆卫), Yang Jiang(江洋), and Hong Chen(陈弘) |
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Enhanced absorption process in the thin active region of GaAs based p-i-n structure |
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Chin. Phys. B
2021 Vol.30 (9): 97803-097803
[Abstract]
(388)
[HTML 1 KB]
[PDF 1115 KB]
(121)
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97104 |
Yangfeng Li(李阳锋), Yang Jiang(江洋), Junhui Die(迭俊珲), Caiwei Wang(王彩玮), Shen Yan(严珅), Haiyan Wu(吴海燕), Ziguang Ma(马紫光), Lu Wang(王禄), Haiqiang Jia(贾海强), Wenxin Wang(王文新), Hong Chen(陈弘) |
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Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction |
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Chin. Phys. B
2018 Vol.27 (9): 97104-097104
[Abstract]
(829)
[HTML 1 KB]
[PDF 666 KB]
(169)
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87303 |
Di Liu(刘頔), Xiao-Zhuo Qi(祁晓卓), Kuei-Lin Chiu(邱奎霖), Takashi Taniguchi, Xi-Feng Ren(任希锋), Guo-Ping Guo(郭国平) |
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Optoelectronic properties of bottom gate-defined in-plane monolayer WSe2 p-n junction |
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Chin. Phys. B
2018 Vol.27 (8): 87303-087303
[Abstract]
(545)
[HTML 1 KB]
[PDF 2359 KB]
(237)
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117803 |
Haiyan Wu(吴海燕), Ziguang Ma(马紫光), Yang Jiang(江洋), Lu Wang(王禄), Haojun Yang(杨浩军), Yangfeng Li(李阳锋), Peng Zuo(左朋), Haiqiang Jia(贾海强), Wenxin Wang(王文新), Junming Zhou(周钧铭), Wuming Liu(刘伍明), Hong Chen(陈弘) |
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Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction |
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Chin. Phys. B
2016 Vol.25 (11): 117803-117803
[Abstract]
(733)
[HTML 1 KB]
[PDF 560 KB]
(328)
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97307 |
Wenqi Wang(王文奇), Lu Wang(王禄), Yang Jiang(江洋), Ziguang Ma(马紫光), Ling Sun(孙令), Jie Liu(刘洁), Qingling Sun(孙庆灵), Bin Zhao(赵斌), Wenxin Wang(王文新), Wuming Liu(刘伍明), Haiqiang Jia(贾海强), Hong Chen(陈弘) |
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Carrier transport in III-V quantum-dot structures for solar cells or photodetectors |
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Chin. Phys. B
2016 Vol.25 (9): 97307-097307
[Abstract]
(764)
[HTML 1 KB]
[PDF 593 KB]
(453)
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47306 |
Pan Yang(杨盼), Wen-Jie Chen(谌文杰), Jiao Wang(王娇), Zhao-Wen Yan(闫兆文), Jian-Li Qiao(乔坚栗), Tong Xiao(肖彤), Xin Wang(王欣), Zheng-Peng Pang(庞正鹏), Jian-Hong Yang(杨建红) |
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Numerical simulation of the magnetoresistance effect controlled by electric field in p-n junction |
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Chin. Phys. B
2016 Vol.25 (4): 47306-047306
[Abstract]
(771)
[HTML 1 KB]
[PDF 424 KB]
(309)
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96101 |
Liu Jing (刘静), Wang Jia-Ou (王嘉鸥), Yi Fu-Ting (伊福廷), Wu Rui (吴蕊), Zhang Nian (张念), Ibrahim Kurash (奎热西) |
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Photoelectric characteristics of silicon P-N junction with nanopillar texture：Analysis of X-ray photoelectron spectroscopy |
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Chin. Phys. B
2014 Vol.23 (9): 96101-096101
[Abstract]
(617)
[HTML 1 KB]
[PDF 844 KB]
(435)
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1440 |
Zhang Lei(张磊), Deng Ning(邓宁), Ren Min(任敏), Dong Hao(董浩), and Chen Pei-Yi(陈培毅) |
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Dependences of spin polarization on the control parameters in the spin-polarized injection through the magnetic p-n junction |
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Chin. Phys. B
2007 Vol.16 (5): 1440-1444
[Abstract]
(1593)
[HTML 0 KB]
[PDF 423 KB]
(642)
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460 |
Xuan Kai (宣凯), Yan Xiao-Hong (颜晓红), Ding Shu-Long (丁书龙), Yang Yu-Rong (杨玉荣), Xiao Yang (肖杨), Guo Zhao-Hui (郭朝辉) |
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The influence of electronic transport across interface junction between Si substrate and the root of ZnO micro-prism on field emission performance |
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Chin. Phys. B
2006 Vol.15 (2): 460-465
[Abstract]
(1192)
[HTML 1 KB]
[PDF 634 KB]
(198)
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